Abstract: At submicron range below 45 nm technology for MOS transistors, leakage power dissipation is a critical concern other than dynamic and short circuit power dissipation. This happens due to the ...
Abstract: A simple equation RF MOS FET model using hyperbolic tangent functions and its parameter extraction technique have been demonstrated. Only twenty parameters are required without physical ...
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Ask the publishers to restore access to 500,000+ books. A line drawing of the Internet Archive headquarters building façade. An illustration of a heart shape "Donate to the archive" An illustration of ...
This paper presents a current sensing principle appropriate for use in power electronics' converters. This current measurement principle has been developed for metal oxide semiconductor field effect ...
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