This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...

Mostly-Analog editor Andy Turudic takes a look at the original 1963 ISSCC paper that described the world’s first CMOS process with planar P- and N-type MOSFETs.

Tokyo-based Toshiba Corp and its Irvine, Calif.-based subsidiary Toshiba America Electronic Components this week detailed its 16-Gb NAND flash memory chip, manufactured on its 43-nm process technology ...

advanced CMOS image sensor solutions, including a 1/8.2-inch 1.2 Megapixel (Mp) imager a 1/2.3-inch 16Mp high-sensitivity imager a 20nm-class high-performance eMMC embedded NAND solution ...

With the advancement in semiconductor technology, chip density and operating frequency are increasing, so the power consumption in VLSI circuits has ...