To jump start balanced-circuit performance, the ALD1121E (dual) and ALD1123E (quad) matched MOSFET arrays rely on the company's proprietary e-trim process, which promises tight ...

The independent control of each device in the package will enable each MOSFET to be characterized with different input and output requirements. This further reduces size and weight in systems by ...

Mechanical switches can be noisy, generating multiple transient pulses that may cause faulty operation of fast digital circuits. In this design, a pair of MOSFETs are used in ...

This course covers the designing and building of advanced electronic circuits and systems. The approach to design is through advanced application of sensor interfacing, instrumentation and low-noise ...

For load-side circuits, this approach is superior to the diode since the source (battery) voltage enhances the MOSFET, yielding less voltage drop and effectively higher conductance. The NMOS version ...

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: “The ...

KUALA LUMPUR, May 18 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched “SSM14N956L”, a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in ...

We develop band-to-band tunneling FET technologies allowing to operate at supply voltage much lower than that in the conventional CMOS and to significantly reduce the power consumption of integrated ...

Toshiba’s new 100V N-ch power MOSFET with low On-resistance and an expanded safe operating area supports miniaturization of power supply circuits.