Infineon Technologies AG uses the advanced neutral-point-clamped (ANPC) topology for its hybrid silicon-carbide (SiC) and IGBT power module EasyPACK 2B in the 1200-V family. Optimizing for sweet-spot ...

Infineon is set to debut its HybridPack Drive G2 Fusion, a power module combining silicon and silicon carbide (SiC), at next month’s electronica 2024 trade show. Intended for traction inverters in the ...

Through its XbloX platform X-FAB is offering easy access to a standardised yet flexible set of SiC process technologies that accelerate the development of advanced power devices. From rapid ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...

The high 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment, while 77% lower switching loss vs.

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...

Cree has introduced a new silicon-carbide (SiC) power module, the CCS050M12CM, which it claims cuts power losses by 75% over silicon modules with equivalent ratings. The 1.2kV, 50A six-pack module is ...

Why was the CoolSiC MOSFET cell design implemented into the HybridPACK Drive? How traction inverters based on CoolSiC power modules impacted Hyundai's E-GMP platform. At this year’s virtual PCIM trade ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...

Compared with traditional 3-level neutral-point-clamped topologies, the advanced neutral-point-clamped (ANPC) inverter design supports an even loss distribution between semiconductor devices. Infineon ...